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FDC3535
P-Channel Power Trench ? MOSFET
-80 V, -2.1 A, 183 m Ω
Features
Max r DS(on) = 183 m Ω at V GS = -10 V, I D = -2.1 A
Max r DS(on) = 233 m Ω at V GS = -4.5 V, I D = -1.9 A
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
S
June 2010
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench ? process that has
been optimized for r DS(on) , switching performance and
ruggedness.
Applications
Load Switch
Synchronous Rectifier
D
S
4
3
G
D
D
5
2
D
G
D
Pin 1
D
D
6
1
D
SuperSOT
TM
-6
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-80
±20
Units
V
V
I D
E AS
P D
T J , T STG
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
-2.1
-10
37
1.6
0.7
-55 to +150
A
mJ
W
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
30
78
°C/W
Package Marking and Ordering Information
Device Marking
.535
Device
FDC3535
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C
1
www.fairchildsemi.com
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